 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| v01.0604 MICROWAVE CORPORATION HMC455LP3 InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Features Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3 x 3 x 1 mm QFN SMT Package 8 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for high linearity applications: * Multi-Carrier Systems * GSM, GPRS & EDGE * CDMA & WCDMA * PHS Functional Diagram General Description The HMC455LP3 is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1/2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 makes the HMC455LP3 an ideal driver amplifier for PCS/3G wireless infrastructure. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifications, TA = +25 C, Vs= +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 37 24 11.5 Min. Typ. 1.7 - 1.9 13.5 0.012 13 10 27 28.5 40 7 150 39 24.5 0.02 10.5 Max. Min. Typ. 1.9 - 2.2 13 0.012 15 18 27.5 28 42 6 150 37 23 0.02 9 Max. Min. Typ. 2.2 - 2.5 11.5 0.012 10 15 26 27 40 6 150 0.02 Max. Units GHz dB dB / C dB dB dBm dBm dBm dB mA 8 - 264 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC455LP3 InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Broadband Gain & Return Loss 15 10 5 S21 S11 S22 Gain vs. Temperature 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 1.5 8 AMPLIFIERS - SMT 8 - 265 RESPONSE (dB) -5 -10 -15 -20 -25 1 1.5 2 FREQUENCY (GHz) 2.5 3 GAIN (dB) 0 +25C +85C -40C 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 -5 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) -10 -15 -20 +25C -10 -15 -20 -25 -30 1.5 +85C -40C -25 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 30 29 28 27 Psat vs. Temperature 30 29 28 27 P1dB (dBm) 26 25 24 23 +25C Psat (dBm) 26 25 24 23 +25C 22 21 20 1.7 1.8 1.9 +85C -40C 22 21 2.1 2.2 2.3 2.4 2.5 20 1.7 1.8 1.9 +85C -40C 2 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC455LP3 GaAs InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 8 AMPLIFIERS - SMT Output IP3 vs. Temperature 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 1.7 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 +25C OIP3 (dBm) +25C +85C -40C 2 1 0 1.7 1.8 1.9 +85C -40C 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression @ 1.95 GHz 60 56 52 Pout 48 Gain 44 PAE 40 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 0 2 Power Compression @ 2.15 GHz 60 56 Pout 52 Gain 48 PAE 44 40 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 0 Pout (dBm), GAIN (dB), PAE (%) 4 6 8 10 12 14 16 18 20 Pout (dBm), GAIN (dB), PAE (%) 2 4 6 8 10 12 14 16 18 20 INPUT POWER (dBm) INPUT POWER (dBm) Reverse Isolation vs. Temperature 0 -5 ISOLATION (dB) +25C +85C -40C Gain, Power & IP3 vs. Supply Voltage @ 1.95 GHz Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 44 40 36 32 28 24 20 16 12 8 4.5 Gain P1dB Psat OIP3 -10 -15 -20 -25 -30 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 4.7 5 Vs (Vdc) 5.2 5.5 FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 266 v01.0604 MICROWAVE CORPORATION HMC455LP3 GaAs InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz ACPR vs. Supply Voltage @ 1.96 GHz CDMA 2000, 9 Channels Forward -40 ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DPCH -30 -35 8 AMPLIFIERS - SMT 8 - 267 -45 ACPR (dBc) -50 4.5V 5V 5.5V ACPR (dBc) CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -40 -45 -50 -55 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH 4.5V 5V 5.5V -55 -60 -60 Source ACPR Source ACPR -65 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) -65 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC455LP3 GaAs InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 8 AMPLIFIERS - SMT Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vs = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 16 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc +30 dBm 150 C 1.04 W 63 C/W -65 to +150 C -40 to +85 C Outline Drawing NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 268 v01.0604 MICROWAVE CORPORATION HMC455LP3 InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Pin Descriptions Pin Number 1, 2, 4 - 9, 11 - 16 Function N/C Description This pin may be connected to RF ground. This pin is AC coupled. An off chip series matching capacitor is required. Interface Schematic 8 AMPLIFIERS - SMT 3 RFIN 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Application Circuit TL1 Impedance Physical Length Electrical Length 50 Ohm 0.33" 34 TL2 50 Ohm 0.18" 19 TL3 50 Ohm 0.13" 13.5 TL4 50 Ohm 0.04" 4 Recommended Component Values L1 C1 C2, C3 C4 C5 8.2 nH 2.2 F 3.0 pF 0.9 pF 100 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 269 v01.0604 MICROWAVE CORPORATION HMC455LP3 InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 8 AMPLIFIERS - SMT Evaluation PCB J3 Pin Number 1, 2, 3 4, 5, 6 Description GND Vs List of Materials Item J1 - J2 J3 C1 C2, C3 C4 C5 L1 U1 PCB* Description PC Mount SMA Connector 2 mm DC Header 2.2 F Capacitor, Tantalum 3.0 pF Capacitor, 0402 Pkg. 0.9 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 8.2 nH Inductor, 0402 Pkg. HMC455LP3 Power Amplifier 106492 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 270 v01.0604 MICROWAVE CORPORATION HMC455LP3 InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 271 |
Price & Availability of HMC455LP3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |